4H-SiC can be used to grow third-generation semiconductor silicon carbide single crystal substrates, targeting markets such as new energy vehicles, photovoltaic/wind power inverters, and ultra-high voltage transmission and transformation. It can effectively improve the yield of silicon carbide single crystals grown by physical vapor deposition (PVT) method.
Appearance
Bar shaped uniform crystal particles
4H crystal form proportion
>80%
Purity
99.9999%
20 mesh
Particle diameter
